标签: external

TMS320x2833x,2823xExternalInterface(XINTF)ReferenceGuide(Rev.D).pdf

LinearLMI-basedexternalanti-windupaugmentationforstablelinearsystems

集成clean-up-PLL时钟振荡发生器TFF11XXX/TFF100X评估板用户手册，演示板包括一个基于BFU7XX系列微波晶体管输出缓冲放大器。UM10484Integratedclean-up-PLL,TFF1xxxxandbufferamplifierRev.2―2February2012UsermanualDocumentinformationInfoContentKeywordsExternalreference,clean-up-PLL,VCXO,LOgenerator,bufferamplifier,RFoutputpowerlevel,phasenoiseAbstractThisdocumentdescribesanintegrateddemonstration(demo)boardforClean-Up-PLL(CUP)localoscillatorgeneratorTFF11XXX/TFF100X.ThedemoboardincludesanoutputbufferamplifierbasedonBFU7XXseriesmicrowavetransistors.NXPSemiconductors……

TheDS1862XFPLaserControlandDigitalDiagnosticIChasanauxiliarymonitorpin.ThisapplicationnoteexplainshowtheauxiliarymonitorworksandwhatregistersareusedtointernallycalibratetheAUX2MONpinsoitcandrivetheLook-UpTable.ThethreeproceduresforsettinguptheinternalregistersaredetailedanddemonstratedwiththeDS60,anexampletemperaturesensor.……

ExternalMemoryInterfacesinArriaGXDevices……

ExternalMemoryInterfacesinCycloneIIIDevices……

本应用笔记介绍了如何使用LPC24XX外部存储器控制器（EMC）外设驱动外部SDRAM。AN10771UsingtheLPC24xxEMCperipheraltodriveSDRAMRev.01―1December2008ApplicationnoteDocumentinformationInfoContentKeywordsLPC24xx,ExternalMemoryController(EMC),SDRAMAbstractThisapplicationnotedescribeshowtouseLPC24xxExternalMemoryController(EMC)peripheraltodriveexternalSDRAM.NXPSemiconductorsAN10771UsingtheLPC24xxEMCperipheralRevisionhistoryRevDateDescription0120081201InitialversionContactinformationForadditional……

当ARM7内核是在电池供电下处于全速运行模式如何减少电流消耗AN10382UsingtheRTCefficientlyintheLPC213xRev.01―6June2005ApplicationnoteDocumentinformationInfoContentKeywordsRTC,External32.768KHzcrystal,LPC2000,LPC213xAbstractProvidesinformationonreducingcurrentconsumptionfromVbatwhiletheARM7coreisintheactivemodeofoperationPhilipsSemiconductorsAN10382UsingtheRTCefficientlyintheLPC213xRevisionhistoryRevDateDescription0120050606InitialversionContactinformationForadditionalin……

Abstract:ThepurposeofthisapplicationnoteistoexplainhowtoconfiguretheDS1852sothattheAlarmandWarningThresholdscomplywiththememorylocationrequirementsoftheSFF-8472standard.Maxim>AppNotes>A/DandD/Aconversion/samplingcircuitsDigitalpotentiometersKeywords:internalcalibration,externalcalibration,SFF-8472,diagnosticmonitor,fiberoptics,threshold,temperaturemeasurement,voltageJul09,2003measurement,monitor,analoginput,atodAPPLICATIONNOTE2090HowtoConfiguretheDS1852AlarmandWarningThresholdstoComplywithSFF-8472Abstract:ThepurposeofthisapplicationnoteistoexplainhowtoconfiguretheDS1852sothattheAlarmandWarningThresholdscomplywiththememorylocationrequirementsoftheSFF-8472standard.Figure1.DS1852memorymap.DS1852AlarmandWarningThresholdsandtheSFF-8472StandardTheSFF-8472standarddictatestherequirementsfordiagnosticmonitoringinterfacesofopticaltransceivers.The……

【应用手册】ExternalMemoryInterfacesinStratix&StratixGXDevicesStratix®andStratixGXdevicessupportabroadrangeofexternalmemoryinterfacessuchasdoubledatarate(DDR)SDRAM,RLDRAMII,quaddatarate(QDR)SRAM,QDRIISRAM,zerobusturnaround(ZBT)SRAM,andsingledatarate(SDR)SDRAM.Thededicatedphase-shiftcircuitryallowstheStratixandStratixGXdevicestointerfaceattwicethesystemclockspeedwithanexternalmemory(upto200MHz/400Mbps).3.ExternalMemoryInterfacesinStratix&StratixGXDevicesS52008-3.3IntroductionStratixandStratixGXdevicessupportabroadrangeofexternalmemoryinterfacessuchasdoubledatarate(DDR)SDRAM,RLDRAMII,quaddatarate(QDR)SRAM,QDRIISRAM,zerobusturnaround(ZBT)SRAM,andsingledatarate(SDR)SDRAM.Thededicatedphase-shiftcircuitryallowstheStratixandStratixGXdevicestointerfaceattwicethesystemclockspeedwithanexternalmemory(upto200MHz/400Mbps).……

【应用手册】SharingExternalMemoryBandwidthUsingtheMulti-PortFront-EndReferenceDesignThisdocumentdescribesthefeaturesandarchitectureoftheAltera®Multi-PortFront-End(MPFE)referencedesign,detailsthedesignflowyoushouldfollowtointegratetheMPFEblockintoyourdesign,andillustratesthefunctionalityoftheMPFEblockinanexamplesystemwithmultiplemasters.TheMPFEreferencedesignallowsyoutoefficientlyshareaccesstoexternalmemorybetweenmultipledatamastersinyourdesign.CombinedwiththeAlteraDDR2andDDR3SDRAMControllerwithUniPHY,theMPFEblockallowsefficientaccesstoDDR2orDDR3SDRAMmemories.Inthisdocument,thetermsmasterandslavearerelativetotheMPFEreferencedesign,unlessspecificallyreferredtoasamasterinyoursystem.ThemasterportontheMPFEblockconnectstotheslaveportonthememorycontroller.EachslaveportontheMPFEconnectstothemasterportontheuserlogicblockinyoursystemthatrequiresaccesstoexternalmemory.SharingExternalMemoryBandwidthUsingtheMulti-PortFront-EndReferenceDesignAN-637-01ApplicationNoteThisdocumentdescribesthefeaturesandarchitectureoftheAlteraMulti-PortFront-End(MPFE)referencedesign,detailsthedesignflowyoushouldfollowtointegratetheMPFEblockintoyourdesign,andillustratesthefunctionalityofthe……

摘要：这种电路同步同时保持低THD，振幅的正弦波输出，通过三个几十年的频率（20Hz至20kHz）。Maxim>AppNotes>AudioCircuitsSignalGenerationCircuitsKeywords:testing,calibration,puresinewaves,sinewavegenerators,lowTHD,phase-lockedloops,PLL,binaryfrequencydividers,Aug17,2010switched-capacitorlowpassfilters,externalsynchronizationAPPLICATIONNOTE4504Locked-SyncSineGeneratorCoversThreeDecadeswithLowDistortionAbstract:Thiscircuitsynchronizesasinewaveoutputthroughthreedecadesoffrequency(20Hzto20kHz)whilemaintaininglowTHDandconstantamplitude.AsimilarversionofthisarticleappearedintheSeptember18,2009issueofEDNmagazine.Analogapplicationssuchastesting,calibration,andgeneralsystemoperationoftenrequireasinewaveformofaccurateamplitudeandfrequency,withlow……

摘要：本应用笔记讨论了电路的切换，而无需切换噪声的MAX6326电源效率。它讨论了一个简单的二极管条例方法使用这种技术的优点。Maxim>Designsupport>Appnotes>Automotive>APP1136Maxim>Designsupport>Appnotes>MicroprocessorSupervisorCircuits>APP1136Keywords:batterybackup,powerswitching,externalpowersources,batteryswitchover,switchoverJun27,2002APPLICATIONNOTE1136SwitchingBetweenBatteryandExternalPowerSourcesAbstract:ThefollowingapplicationnotediscussesacircuitthatswitchespowersourcesefficientlywithoutswitchingnoiseusingtheMAX6326.Itdiscussestheadvantagesofusingthistechniqueoverasimplediode-ordmethod.AsimilarversionofthisarticleappearedintheMay13,2002issueofElectronicDesignmagazine.Portableequipmentth……

【应用笔记】StratixII、StratixIIGX和ArriaGX器件外部存储器接口设计指南(ExternalMemoryInterfaceDesignGuidelinesforStratixII,StratixIIGX,andArriaGXDevices)Stratix®II和StratixIIGX器件对DDR存储器(如DDR2/DDRSDRAM、QDRII+/QDRIISRAM和RLDRAMII接口)提供支持，而ArriaGX器件支持DDR2和DDRSDRAM接口。Stratix®IIandStratixIIGXdevicesoffersupportfordoubledatarate(DDR)memories,suchasDDR2/DDRSDRAM,QDRII+/QDRIISRAM,andRLDRAMIIinterfaces,whileArria®GXdevicessupportDDR2andDDRSDRAMinterfaces.ApplicationswiththesememoryinterfacesincludePCs,embeddedprocessing,imageprocessing,storage,communications,andnetworking.ExternalMemoryInterfaceDesignGuidelinesforStratixII,StratixIIGX,andArriaGXDevicesSeptember2007,v1.2ApplicationNote449IntroductionStratixIIandStratixIIGXdevicesoffersupportfordoubledatarate(DDR)memories,suchasDDR2/DDRSDRAM,QDRII+/QDRIISRAM,andRLDRAMIIinterfaces,whileArriaGXdevicessupportDDR2andDDRSDRAMinterfaces.ApplicationswiththesememoryinterfacesincludePCs,……

【应用笔记】在Stratix和StratixGX器件中使用外部串行和并行终端(UsingExternalSeriesandParallelTerminationwithStratixandStratixGXDevices)本文档的目的是：指导你如何使用Stratix和StratixGX器件实现外部串行和并行终端。ThepurposeofthisdocumentistogiveyoudirectiononhowtoimplementexternalseriesandparallelterminationusingStratix™andStratix™GXdevices.Arepresentativeimplementationwith200MHz(400Mbps)doubledatarate(DDR)memoryDualIn-lineMemoryModule(DIMM)interfaceisdescribedindetailinthisdocument.Thedocumentprovidesschematics,correspondinglayout,signalintegritysimulationsandlabcorrelationforthesame.Arecommendationforsmallformfactorresistorpackswithbudgetarypricingisalsoprovided.UsingExternalSeriesandParallelTerminationwithStratixandStratixGXDevicesAN-336-1.0ApplicationNoteIntroductionThepurposeofthisdocumentistogiveyoudirectiononhowtoimplementexternalseriesandparallelterminationusingStratixandStratixGXdevices.Arepresentativeimplementationwith200MHz(400Mbps)doubledatarate(DDR)memoryDualIn-lineMemoryModule(DIMM)interfaceisdescribedindetailinthisdocument.Thedocumentprovidesschematics,correspondi……

摘要：本应用笔记的目的是为了解释如何配置DS1852报警和警告阈值，使符合SFF-8472标准的内存位置要求。Maxim>AppNotes>A/DandD/Aconversion/samplingcircuitsDigitalpotentiometersKeywords:internalcalibration,externalcalibration,SFF-8472,diagnosticmonitor,fiberoptics,threshold,temperaturemeasurement,voltageJul09,2003measurement,monitor,analoginput,atodAPPLICATIONNOTE2090HowtoConfiguretheDS1852AlarmandWarningThresholdstoComplywithSFF-8472Abstract:ThepurposeofthisapplicationnoteistoexplainhowtoconfiguretheDS1852sothattheAlarmandWarningThresholdscomplywiththememorylocationrequirementsoftheSFF-8472standard.Figure1.DS1852memorymap.DS1852AlarmandWarningThresholdsandtheSFF-8472StandardTheSFF-8472standarddictatestherequirementsfordiagnosticmonitoringinterfacesofopticaltransceivers.The……

摘要：此应用程序说明讨论的Teridian的71M6531–71M6534能源计量系统芯片(SoC)设备外部串行SRAM的运作。SRAM可以SoC，从而扩展的集成电路内部4KBXRAM以外的额外的存储空间。此外可与影子RAM的功能，如FM25H20SRAM组件。此Ramtron®设备自动传输RAM内容到非易失性内存部分芯片当电源丢失。因此，没有失去仪表的主要电压时保存帐单和其他数据的微处理器(MPU)参与。71M653XEnergyMeterICAMaximIntegratedProductsBrandAPPLICATIONNOTEAN_653X_005JANUARY2009Operatingthe71M653XwithExternalSerialSRAMIntroductionThisApplicationNotedemonstratesmethodsforextendingtheinternal4KBXRAMofthe71M653XEnergyMeteringICstoalargersize.AnexternalstaticmemoryICmaybeconnectedtoa71M653Xusingitsmicro-wireinterface.TheexternalSRAMcanbetreatedasanextrastoragespaceoutside……

ExternalMemoryInterfacesinStratix&StratixGXDevices……

ExternalMemoryInterfacesinStratixII&StratixIIGXDevices……

ConstrainingandAnalyzingTimingforExternalMemoryInterfacesinStratixIIIandCycloneIIIDevices……