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AlinearizationtechniqueforRFlownoiseamplifierALINEARIZATIONTECHNIQUEFORRFLOWNOISEAMPLIFIERChunyuXin,EdgarSanchez-SinencioTexasA&MUniversityDepartmentofElectricalEngineeringCollegeStation,TX77843ABSTRACTALNAlinearizationtechniquederivedfrommulti-gatedcongurationusingbipolartransistorsinCMOStechnologyisproposed.BipolartransistorisusedtoreplacetheauxiliaryMOStransistortoachievehigheroperationalspeed.Bothsingle-endedanddifferentialapplicationsareinvestigated.Simulationshowsthatthismethodiscompetitivewithalreadyreportedlownoiseampliers.For3GHzoffrequencyoperation,thesingle-endedstructureachieves+15dBmIIP3with8.9mWpowerconsumption,andthedifferentialarchitecturecanachieve+14dBmIIP3with21mWpowerconsumption.1.INTRODUCTIONLinearityisake……