标签: e-phemt

E-pHEMT(enhancement-modehigh-electronmobilitytransistor)isasemiconductorprocessoptimizedforwirelessapplicationsthatoperatesfromasinglepositivevoltagesource.Ordinarydepletion-modepHEMTsconductatzerogatebias,orwhenthedraincurrent,Id,reachesasaturatedlevel(Idss)atagate-sourcevoltage(Vgs)of0VDC.AnE-pHEMTshowsnoconductionatzerogatebias,sothatId=0atVgs=0V.Thus,itcanoperatewithoutthenegativevoltage(requiredforswitchon)requiredfordepletionmodedevices.Othergalliumarsenidemetalsemiconductorfieldeffecttransistors(GaAsMESFET—alsosimplycalledGaAsFETs)andhigh-electron-mobilitytransistors(HEMT)alsooperatefromapositivevoltagesupplyandrequireanegativevoltagetoturnon.Theaddedcomponentsrequiredtoprovidethenegativevoltageincreasesystemcost,takeupvaluableboardspaceandrequireextradesigneffort.DevelopmentofE-pHEMTTechnologyWhitePaperAvago’sE-pHEMTtechnologySantaClarawaferfabricationlocation.DuringtheE-pHEMT(enhancement-modehigh-electronmobilitylastfouryears,Avagohasfocuseditsepitaxialandtransistor)isasemiconductorprocessoptimizedforwaferdevelopmenttalentsandresourceonthewirelessapplicationsthatoperatesfromasinglefabricationoffour-inchPHEMTwafers.Thisisinpositivevoltagesource.Ordinarydepletion-modecontrasttoothercompanieswhereE-pHEMTwaspHEMTsconductatzerogatebias,orwhenthedrainonlyoneoftwoorthreecandidatesforpotentialusecurrent,Id,reachesasaturatedlevel(Idss)atagate-incellularhandsetpoweramplifiers.sou……

构建一款E-pHEMT低噪声放大器,构建一款E-pHEMT低噪声放大器……