标签: 柯明
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柯明道ESD最新論文(2006)102IEEETRANSACTIONSONDEVICEANDMATERIALSRELIABILITY,VOL.6,NO.1,MARCH2006ESDFailureMechanismsofAnalogI/OCellsin0.18-mCMOSTechnologyMing-DouKer,SeniorMember,IEEE,Shih-HungChen,andChe-HaoChuangAbstract―Differentelectrostaticdischarge(ESD)protectionschemeshavebeeninvestigatedtondtheoptimalESDprotectiondesignforananaloginput/output(I/O)bufferin0.18-m1.8-and3.3-VCMOStechnology.Threepower-railESDclampdeviceswereusedinpower-railESDclampcircuitstocomparetheprotectionefciencyinanalogI/Oapplications,namely:1)gate-drivenNMOS;2)substrate-triggeredeld-oxidedevice,and3)substrate-triggeredNMOSwithdummygate.Fromtheexperimentalresults,thepure-diodeESDprotectiondevicesandthepower-railESDclampcir……
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柯明道ESD最新論文(2006英文)102IEEETRANSACTIONSONDEVICEANDMATERIALSRELIABILITY,VOL.6,NO.1,MARCH2006ESDFailureMechanismsofAnalogI/OCellsin0.18-mCMOSTechnologyMing-DouKer,SeniorMember,IEEE,Shih-HungChen,andChe-HaoChuangAbstract―Differentelectrostaticdischarge(ESD)protectionschemeshavebeeninvestigatedtondtheoptimalESDprotectiondesignforananaloginput/output(I/O)bufferin0.18-m1.8-and3.3-VCMOStechnology.Threepower-railESDclampdeviceswereusedinpower-railESDclampcircuitstocomparetheprotectionefciencyinanalogI/Oapplications,namely:1)gate-drivenNMOS;2)substrate-triggeredeld-oxidedevice,and3)substrate-triggeredNMOSwithdummygate.Fromtheexperimentalresults,thepure-diodeESDprotectiondevicesandthepower-railESDclampcir……
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