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时间: 2020-1-13 09:35
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XZ2101CRTElectronicTechnologyCo.,Ltd.P-ChannelEnhancementModeFieldEffectTransistorzFeatureszGeneralDescriptionP-ChannelenhancementXZ2101HighdensityCellDesignforLowRDS(ON)VoltagecontrolledsmallsignalswitchReliableandRuggedThesemodefieldeffecttransistorsareproducedusinghighcelldensity,DMOStechnology.zPinConfigurationsD31G2SSOT23zAbsoluteMaximumRatings@TA=25℃unlessotherwisenotedParameterDrain-SourceVoltageGate……