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  • 所需E币: 5
    时间: 2020-1-15 11:43
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    功放管匹配FreescaleSemiconductorApplicationNoteNOTE:Thetheoryinthisapplicationnoteisstillapplicable,butsomeoftheproductsreferencedmaybediscontinued.AN721Rev.1,10/2005ImpedanceMatchingNetworksAppliedtoRFPowerTransistorsBy:B.Becciolini1.INTRODUCTIONSomegraphicandnumericalmethodsofimpedancematchingwillbereviewedhere.Theexamplesgivenwillrefertohighfrequencypoweramplifiers.Althoughmatchingnetworksnormallytaketheformoffiltersandthereforearealsousefultoprovidefrequencydiscrimination,thisaspectwillonlybeconsideredasacorollaryofthematchingcircuit.Matchingisnecessaryforthebestpossibleenergytransferfromstagetostage.InRF-powertransistorstheinputimpedanceisoflowvalue,decreasingasthepowerincr……
  • 所需E币: 5
    时间: 2020-1-13 16:50
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    使用ADS进行LDMOS功放管匹配仿真方法MOTOROLAFreescaleSemiconductor,Inc.SEMICONDUCTORENGINEERINGBULLETINOrderthisdocumentbyEB212/DEB212UsingDataSheetImpedancesforRFLDMOSDevicesPreparedby:DarinWagnerMotorolaSemiconductorProductsSectorINTRODUCTIONThisdocumentexplainstheformatusedbyMotorolaforpresentingLDMOSimpedanceinformationforbothsingle-endedandpush-pulldevicesonRFPowerdatasheets.Thepurposeofthisdocumentistoclarifytheuseofthisinformationintheinitialdesignofinputandoutputmatchingnetworksforthesedevices.Multiplemethodsareavailableforimpedanceextraction.Thescopeofthisdocumentdoesnotcoverdetailedextractionmethods;however,apossibleextractionmethodisexplainedhere.Whichevermethodisused,themainconcerntobeFrees……