标签: iv-3ho

IV-3HOIV-3.MESFETandDevicesParameters(1)GaAsMESFET1x250mMESFETCi:Gate-to-Sourcecapacitance~0.3pFri:ChargingresistanceofCi~25Cgd:Gate-to-Draincapacitance~0.02pFCgdjωτgmVeLsRgLgLdV+CgsRsRiCds:Drain-to-Sourcecapacitance~0.05pFRdrds:Drain-to-Sourceresistance~600gm:transconductance~40mSgdsCdsfT≈gm2πCifT=12πτc=vs2πLτc=Lvsfmaxf=T2rds33x103riLICE651MMICDesignIV-3-1IV-3.MESFETandDevicesParameters(2)MeasuredS-ParametersS11:R-CserialcircuitsmallwithzeroCgdConstantresistantcircleS12:smallbecauseofsmallCgdS21:inputvoltagebtnCgsatlowfdecreasedvoltagebtnCgsathierfS22:R-CparallelcircuitConstantconductancecircleHighf:increased……