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  • 所需E币: 3
    时间: 2020-1-13 20:22
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    bfg21wDISCRETESEMICONDUCTORSM3D124BFG21WUHFpowertransistorProductspecicationSupersedesdataof1997Nov21FileunderDiscreteSemiconductors,SC141998Jul06PhilipsSemiconductorsProductspecicationUHFpowertransistorFEATURESHighpowergainHighefficiency1.9GHzoperatingareaLinearandnon-linearoperation.APPLICATIONSCommonemitterclass-ABoutputstageinhandheldradioequipmentat1.9GHzsuchasDECT,PHS,etc.DriverforDCS1800,1900.DESCRIPTIONNPNdoublepolysiliconbipolarpowertransistorwithburiedlayerforlowvoltagemediumpowerapplicationsencapsulatedinaplastic,4-pindual-emitterSOT343Rpackage.2Topview1MSB842BFG21WPINNINGPIN1,324basecollectorDESCRIPTIONemitterhandbook,halfpage34Markingcode:P1.Fig.1Simpl……