原创 Hittite

Founded in 1985, Hittite Microwave Corporation designs and develops high performance integrated circuits (ICs), modules and subsystems for technically demanding radio frequency (RF), microwave and millimeterwave applications covering the frequency range of DC to 110 GHz.

We have developed a deep knowledge of analog, digital and mixed-signal semiconductor technology, from the device level to the design and assembly of complete subsystems.

Our Radio Frequency Integrated Circuit (RFIC) and Monolithic Microwave Integrated Circuit (MMIC) products are developed using Gallium Arsenide (GaAs) and Silicon based semiconductor processes. These state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilize MESFET, pHEMT, mHEMT and HBT devices. We are a fabless company and develop our own IP that is used in our IC products which are fabricated at outside wafer foundries.

We believe that the combination of our proprietary circuit design, semiconductor device modeling expertise and our broad in-house engineering, assembly and test capabilities provides us with a competitive advantage and enables us to deliver high performance, high value products to our customers. Our business is characterized by the breadth and diversity of our product offerings, customer base, eight end markets and numerous applications. Our product portfolio currently includes more than 500 standard products and many more custom products, including;