标签: phemt

Thedesignandimplementationofahighisolationbufferamplifierispresented.ThisICusesatwogainstagetopologyprocessedintheAvagoTechnologiesEnhancementModepHEMTGaAstechnologyandispackagedinthe8-lead2mmx2mmLPCC.Itoperatespreferablyfroma5Voltsupplyandcon-sumesapproximately35mAquiescentcurrent.Byvaryinganexternalbiasresistor,thebufferampli-fiercandelivermaximumoutputpowerupto20dBmat2GHz.Ithasbetterthan40dBofinput-out-putportisolationandoperatesfrom0.5GHzto6GHz.TheICfeaturesinputandoutputportsmatchedto50ohmsimpedanceandprovides20dBcom-pressedgainat2GHz.AtypicaluseofthepartisfordrivingapassivemixerLOportfromaVCOwherehighreverseisolationisrequiredbytheVCO.AHighIsolationBufferAmplifierusingEnhancementModePHEMTTechnologyWhitePaperAbstractiseasilyfrequencypulledbyvariationsinloadimpedance.HighlinearitypassivemixerstypicallyThedesignandimplementationofahighisolationrequire+17dBmLOdrivelevelsandpresentvary-bufferamplifierispresented.ThisICusesatwogainingloadimpedancestotheLOsource.Hence,aneedstagetopologyprocessedintheAvagoTechnologiesexistsforabufferamplifierthatcanraisetheVCOEnhancementModepHEMTGaAstechnologyandoutputsignaltotherequiredpowerleveloftheispackagedinthe8-lead2mmx2mmLPCC.Itmixer,wh……

AminiaturePHEMTswitched-LNAfor800MHzto8TUEl-2AMINATUREPHEMTSWITCHED-LNAFOR800MHzto8.0GHzHANDSETAPPLICATIONS.HenrikMorkner,MikeFrank,ShunYajimaHewlett-Packard,WSDR&D39201CherryStreet,MS830NK10Newark,California,94560ABSTRACTApowerfulmonolithicintegratedswitched-LowNoiseAmplifierutilizingadvancedpseudomorphicGaAshasbeendeveloped.TheSwt-LNAcovers800MHzto8000MHzbuttheprimaryapplicationfocusis800MHzto2500MHz.IngainmodetheSwt-LNAoperatesonasingle3Voltsupplyandthecurrent(thusoutputIP3)canbeadjustedfrom5to60mA(InputIP3=+1to+15dBm).TheSwt-LNAprovidesatypical1.4dBnoisefigureand14dBgain.WhenthecurrentcontrolpinsetstheLNAto0mA,theSwtLNAgoesautomaticallyintobypassmode.Bypassmodehastypically2dBlossand+35dBml……

Ku波段PHEMT单片低噪声放大器的设计与实验1995-2006TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.1995-2006TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.1995-2006TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.1995-2006TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.……

Anopticalphotolithographybased0.15μmGaAsPHEMTprocessand2mil-substratetechnologythatenableshighproductionthroughputandlowcostisdescribed.ThedevelopedprocessachievedImax=575mA/mm,BVgd=14V,and753mW/mmofoutputpowerdensityatP-1conditionat18GHz.DesignandtestresultsforDCto85GHztravelingwaveamplifer(TWA)and29-30.5GHz4.9Wpoweramplifer(PA)arealsodescribedasprocesscapabilityverifcation.TWAshows8dBofsmall-signalgainand12dBmofoutputpowerupto85GHzfrequency.PAshows20dBofsmall-signalgainand36.9dBmofoutputpowerat3dBgaincompressionconditioninbetween29and30.5GHzfrequencies.TheseresultsverifytheprocesscapabilitytomanufactureMMICdevicesforapplicationsupto90GHz.DCto85GHzTWAandKa-band4.9WPowerAmplifierUsinganOpticalLithographyBasedLowCostPHEMTProcessKoheiFujii,JohnStanback,andHenrikMorknerWhitePaperAbstractOverviewofTheMmicProcessAnopticalphotolithographybased0.15μmGaAsPHEMTAvago's0.15μmdepletionmodepHEMTprocessutilizesprocessand2mil-substratetechnologythatenablesadoubledelta-dopedAlGaAs/InGaAs/AlGaAshetero-highproductionthroughputandlowcostisdescribed.junctionepitaxiallayeroptimizedtoachieveabout575ThedevelopedprocessachievedImax=575mA/mm,mA/mmmaximumchannelcurrentanddraintogateBVgd=14V,and753mW/mmofoutputpowerdensityatbreakd……