标签: 管模

晶体管模型微波毫米波晶体管器件特性与模型微波毫米波晶体管器件特性与模型OMMIC’sGaAsP-HEMTTransistors杨守军微波毫米波晶体管器件特性与模型GaAsP-HEMTTransistorsAreFabricatedFromtheepitaxialActiveLayer,DefinedbytheMaskLI.TheohmicContactMetal(OHMask)MakestheContactWiththeActiveLayer,WhiletheGateMetal(GMMask)CreatestheshottkyDiode.ThentheDielectricsAreEtched(COMask),andtheDeviceIsInterconnectedWiththeOtherPartsoftheCircuit(INMask).微波毫米波晶体管器件特性与模型一、直流特性1.FETON(Vt=-0.9V)DCcharacteristicsNameVtIdssDefinitionThesholdVoltage:VgsforIds=1mA/mmatVds=3VDrainSourcecurrentatVgs=0VandVds=3VUnitVmA/mmVVmS/mmScaling×W×WValue-0.9250-8.0-4.6440Drain+SourcetoGatevoltageforVbrgssIg=1mA/mm(DrainandSourceshortcircuited)VleakgmDrain+SourcetoGa……