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MRF9060FreescaleSemiconductorTechnicalDataDocumentNumber:MRF9060Rev.9,5/2006RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETsDesignedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifierapplicationsin26voltbasestationequipment.TypicalTwo-TonePerformanceat945MHz,26VoltsOutputPower―60WattsPEPPowerGain―17dBEfficiency―40%IMD―-31dBcCapableofHandling10:1VSWR,@26Vdc,945MHz,60WattsCWOutputPowerFeaturesIntegratedESDProtectionDesignedforMaximumGainandInsertionPhaseFlatnessExcellentThermalStabilityCharacterizedwithSeriesEquivalentLarge-……