标签: mwe6ic9100n

MWE6IC9100NFreescaleSemiconductorTechnicalDataDocumentNumber:MWE6IC9100NRev.2,6/2007RFLDMOSWidebandIntegratedPowerAmplifiersTheMWE6IC9100Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom869to960MHz.Thismulti-stagestructureisratedfor26to32Voltoperationandcoversalltypicalcellularbasestationmodulations.FinalApplicationTypicalGSMPerformance:VDD=26Volts,IDQ1=120mA,IDQ2=950mA,Pout=100WattsCW,FullFrequencyBand(869-960MHz)PowerGain―33.5dBPowerAddedEfficiency―54%GSMEDGEApplicationTypicalGSMEDGEPerformance:VDD=28Volts,IDQ1=230mA,IDQ2=870mA,Pout=50WattsAvg.,FullFrequencyBand(869-960MHz)PowerGain―35.5dBPowerAddedEfficiency―39%SpectralRegrowth@……