标签: mt41k128m16

            MT41K512M4 64Megx4x8banks MT41K256M8 32Megx8x8 banks MT41K128M16 16Megx16x8 banks 是低电压版本，相比1.5v DDR3 SDRAM 而言，其电压为1.35v，其他各方面参数完全符合DDR3 SDRAM的相关规范。QQ:1762516767 18675554078，原装现货，欢迎交流。（更多详情） MT41K128M16 MT41K256M8 MT41K512M4的主要功能特性包括以下： • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4(via the mode register set ) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C • Self refresh temperature (SRT) • Automatic self refresh (ASR) • Write leveling • Multipurpose register • Output driver calibration MT41K128M16 MT41K256M8 MT41K512M4的管脚图如下:   MT41K128M16 MT41K256M8 MT41K512M4的采购信息如下，较常用的型号如MT41K128M16JT-125:K。     (以上信息由深圳市桑尼奇科技有限公司提供)