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2015-8-17 17:58
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CMPA2735075F,CGH31240F,CGH35240F产品**,原厂现货,低价出售,CREE GaN HEMT-CREE 用于 S 频段应用的 GaN HEMT 产品CMPA2735075F/CGH31240F/CGH35240F CMPA2735075F,CGH31240F,CGH35240F产品**,原厂现货,低价出售,CREE wbr wbrGaN wbrHEMT-CREE CMPA2735075F 功率放大器 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package. 主要参数: • 27 dB Small Signal Gain • 80 W Typical PSAT • Operation up to 28 V • High Breakdown Voltage • High Temperature Operation • 0.5” x 0.5” Total Product Size 产品应用: Civil and Military Pulsed Radar Amplifiers Datasheet http://www.cree.com/~/media/Files/Cree/RF/Data Sheets/CMPA2735075F.pdf CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Datasheet http://www.cree.com/~/media/Files/Cree/RF/Data Sheets/CGH31240F.pdf CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Datasheet http://www.cree.com/~/media/Files/Cree/RF/Data Sheets/CGH35240F.pdf