tag 标签: biss

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  • 所需E币: 5
    时间: 2019-12-28 19:21
    大小: 204.19KB
    上传者: wsu_w_hotmail.com
    本应用笔记说明针对过压和反向极性和端口如何保护移动设备和充电器电池充电拓扑结构,以及如何使用恩智浦半导体双极型和MOS晶体管保护器件。AN10910ProtectingchargerinterfacesandtypicalbatterychargingtopologieswithexternalbypasstransistorsRev.2―23June2011ApplicationnoteDocumentinformationInfoContentKeywordsBISS,MOSFET-Schottky,lowVCEsat,batterycharger,Li-Ionbattery(Li-polymerbattery),overvoltageprotection,reversepolarityprotection,ESDprotectionAbstractThisapplicationnoteillustrateshowtoprotectamobiledevicechargerportagainstovervoltageandreversepolarityandgivesanoverviewoftypicalbatterychargingtopologiesandhowtouseNXPSemiconductorsp……
  • 所需E币: 4
    时间: 2019-12-28 19:22
    大小: 236.22KB
    上传者: 238112554_qq
    本应用笔记提供详细双极晶体管和肖特基整流器领域的最新产品信息,这使设计师能够节省成本和提高电子电路性能。AN10393BISStransistorsandMEGASchottkyrectifiers-improvedtechnologiesfordiscretesemiconductorsRev.01.00―01September2005ApplicationnoteDocumentinformationInfoContentKeywordsBISStransistor,MEGASchottkyrectifier,DC/DCconverter,Loadswitch,Blockingdiode,Mediumpower,PBSS4240V,PBSS4350T,PBSS4320T,PMEG2010AEJ,PMEG1020EJ,PMEG6010AED,SOD323F,SOT666AbstractThisapplicationnoteprovidesdetailedinformationonrecentproductdevelopmentsintheareaofbipolartransistorsandSchottkyrectifierswhichenablethedesignertosavecostandtoimprovetheperformance……
  • 所需E币: 3
    时间: 2019-12-28 19:22
    大小: 399.96KB
    上传者: 238112554_qq
    本应用笔记提供关于如何使用飞利浦低VCEsat(BISS)功率晶体管更换旧的中等功率晶体管达到节省成本目的。AN10405Increasedcircuitefficiency,lessrequiredboardspaceandsavedmoneybyreplacingpowertransistorsbylowVCEsat(BISS)transistorsRev.01.00―06January2006ApplicationnoteDocumentinformationInfoContentKeywordsBipolartransistors,BISS,lowVCEsat,PBSS,powertransistorsAbstractThisapplicationnoteprovidesinformationonhowtomakeuseofacostsavingopportunitybyreplacingoldermediumpowerandpowertransistorsbyPhilips’lowVCEsat(BISS)transistors.AcrossreferencetableprovidesacrossreferenceforleadedandSMDtypes.Furtherspreadsheetsshowacomparison……
  • 所需E币: 3
    时间: 2019-12-28 19:23
    大小: 211.25KB
    上传者: 2iot
    本应用笔记说明使用多层PCB如何改善分立元件的功耗。它侧重于讲解使用较大的覆铜来提高应用的热性能的影响。AN11076Thermalbehaviorofsmall-signaldiscretesonmultilayerPCBsRev.1―11July2011ApplicationnoteDocumentinformationInfoContentKeywordsLowVCEsat,BISS,thermalresistance(Rth),thermalimpedance(Zth),totalpowerdissipation(Ptot)AbstractThisapplicationnoteillustrateshowtoimprovethepowerdissipationofdiscretecomponentsbyusingmultilayerPCBs.Itfocusesontheimpactofusinglargercopperareastoimprovethethermalbehaviorofapplications.NXPSemiconductorsAN11076……