标签: 光蚀

Anopticalphotolithographybased0.15μmGaAsPHEMTprocessand2mil-substratetechnologythatenableshighproductionthroughputandlowcostisdescribed.ThedevelopedprocessachievedImax=575mA/mm,BVgd=14V,and753mW/mmofoutputpowerdensityatP-1conditionat18GHz.DesignandtestresultsforDCto85GHztravelingwaveamplifer(TWA)and29-30.5GHz4.9Wpoweramplifer(PA)arealsodescribedasprocesscapabilityverifcation.TWAshows8dBofsmall-signalgainand12dBmofoutputpowerupto85GHzfrequency.PAshows20dBofsmall-signalgainand36.9dBmofoutputpowerat3dBgaincompressionconditioninbetween29and30.5GHzfrequencies.TheseresultsverifytheprocesscapabilitytomanufactureMMICdevicesforapplicationsupto90GHz.DCto85GHzTWAandKa-band4.9WPowerAmplifierUsinganOpticalLithographyBasedLowCostPHEMTProcessKoheiFujii,JohnStanback,andHenrikMorknerWhitePaperAbstractOverviewofTheMmicProcessAnopticalphotolithographybased0.15μmGaAsPHEMTAvago's0.15μmdepletionmodepHEMTprocessutilizesprocessand2mil-substratetechnologythatenablesadoubledelta-dopedAlGaAs/InGaAs/AlGaAshetero-highproductionthroughputandlowcostisdescribed.junctionepitaxiallayeroptimizedtoachieveabout575ThedevelopedprocessachievedImax=575mA/mm,mA/mmmaximumchannelcurrentanddraintogateBVgd=14V,and753mW/mmofoutputpowerdensityatbreakd……