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A25-W5-GHzGaAsFETAmplifierforaMicrowaveLandingSystemIEEETRANSACTIONSONMICROWAVETHEORYANDTECHNIQUES,VOL.MTT-29,NO.6,JUNE1981579A25-W5-GHzGaAsFETAmplifierMicrowaveLandingSystemKAZUHIKOHONJOANDYOICHIROTAKAYAMA,MEMBER,IEEEforaAbstract―developedSystem.hermeticallyconstructedpcrcentexceffent6°/dBA25-W29-dBgain5-GHxGaAsintemafly30-WFETamplifierhasbeenLandingF’ET’s18.5antoFig.1.hasbeenwithLoLZL4LawhichcanbeusedforatransmitterByusingsimply.AM/PM1O-Wclasspraeticafpackages,Thenmpfifierconversionamplifiers.sealedinceramicintheMicrowavematchedGaAsamplifierthefour-stageprovidesofpoweroutput10/dB,%-AEquivrdentcircuitAforinternallymatchedGaAsFET.powerefficiencyforTWTat17-dBmpowerinputlevel.Itafsuexhibitedapproxim……