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daniel_proj_1999_microwave_lnaABroadbandLow-Noise-AmplifierLucaDanielandManolisTerrovitisMay1999DepartmentofElectricalEngineering&ComputerSciencesUniversityofCalifornia,BerkeleyCA94720AbstractThisreportdescribesthedesignofatwo-stagebroadbandlow-noise-amplifier(LNA)forthefrequencyrangefrom3GHzto9GHz,usingGaAsMESFETswithanftof20GHz.Thepassivecomponentswereimplementedwithmicrostrips.Inthefrequencybandofoperation,theachievednoisefigure(NF)iswithin0.5dBfromtheminimumNFofasingletransistor,thepowergainis15dB,flatwithin1dB,andthemaximuminputVSWRislowerthan3.inputGZinRiCgsRcRsSFig.1.RepresentationofaGaAsMESFETcommon-sourceamplifier,usingasimplesmall-signalmodelforthetransistor.+V1-outputDgmV……