daniel_proj_1999_microwave_lnaA Broadband Low-Noise-Amplifier Luca Daniel and Manolis Terrovitis May 1999 Department of Electrical Engineering & Computer Sciences University of California, Berkeley CA 94720 Abstract This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB, and the maximum input VSWR is lower than 3. input G Z in Ri Cgs Rc Rs S Fig. 1. Representation of a GaAs MESFET common-source amplifier, using a simple small-signal model for the transistor. + V1 - output D g m V……