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时间: 2020-1-6 11:36
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4N600BayLinearInspiretheLinearPowerN-ChannelFieldEffectTransistor4N600(3600)DescriptionFeaturesCriticalDCElectricalparametersTheBayLinearn-channelpowerfieldeffecttransistorsareproducedusinghighcelldensityDMOStechnology,ThesespecifiedatelevatedTemp.devicesareparticularlysuitedforhighvoltageapplicationsRuggedinternalsource-draindiodesuchasautomotiveandotherbatterypoweredcircuitswherecaneliminatetheneedforexternalfastswitching,lowin-linepowerlossandresistance……
标签: 4n600
