4N600 Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 4N600(3600) Description Features Critical DC Electrical parameters The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These specified at elevated Temp. devices are particularly suited for high voltage applications Rugged internal source-drain diode such as automotive and other battery powered circuits where can eliminate the need for external fast switching, low in-line power loss and resistance ……