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A0The2004IEEEAsia-PacificConferenceonCircuitsandSystems,December6-9,2004A0.6VCMOSLOWNOISEAMPLIFIERFOR2.4GHZAPPLICATIONChih-LungHsiao,Ro-MinWeng,andKun-YiLinDept.ofElectricalEngineering,NationalDongHwaUniversity,1,Sec.2,DaHsuehRd.,Shou-Feng,Hualien,Taiwan,R.O.C.Phone:+886-3-8634068,Fax:+886-3-863-4060Email:romin@mail.ndhu.edu.twABSTRACTAlowvoltageCMOSlownoiseamplifier(LNA)for2.4GHzapplicationis,presentedinthispaper.Afoldedcascodesmctureisemployedtoreducethesupplyvoltage.Thesupplyvoltageisonly0.6V.TheproposedcircuitissimulatedbyAgilentADSwithtsmc0.lXpmRFmodel.At2.4GHz,thenoisefigure(NF)is1.56dBandthepowergainis13.8dB.AntennaL-p.-p+';Wb-+MixerIFQ1.INTRODUCTIONFig.1.Dire……

A1A1.8d13NoiseFigureLowDCPowerMMICLNAforC-BandJakubJ.KuceraandUrsLottETHZurich,LaboratoryforEMFieldsandMicrowaveElectronics,Gloriastrasse35,CH-8092Zurich,Switzerland;email:kucera@ifh.ee.ethz.chABSTRACTAtwostagemonolithiconchipmatchedlownoiseamplifier(LNA)forthefrequencyrangeof5to6GHzhasbeendesigned.A50IRnoisefigureof1.8dBandanassociatedgainof16.5dBweremeasuredataDCpowerdissipationofonly6mWfroma1Vsupply,includingthebiascircuitry.At5.5GHztheinputreturnlossandreverseisolationarebetterthan-10dBand-35dEl,respectively.stagesarebiasedatthesamecurrent.Thenoisecontributionofthebiasingresistorsarenegligible.TheoutputofeachstageisloadedwithabandpassLCsectionto……

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