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晶体管烧毁机理的研究:If一,,真空与低温vacuum&Cryogenics一第13卷第8期1994 ̄9月缎邵一.:象刊3醛lSAM.,E微波GaAs功率场效应晶体管烧毁机理的研究:I.直流烧毁查至垂苎圭塑.(兰州物理研究竹)InvestigationofburnoutmechanisminmicrowaveGaAspowerFETs:PartI.D.C.burnoutYuanZeliangFanChuizhen(Lanzhouinsk; ̄uteoFPhysics)AbsLractMic1"OwayeGaA。P0WerFETChiPfabrcatedbyusWhichaPpearD・C・burnoutduringthetestingreiavestjgatedbYmeansof5CBnn―jgelectfonmjcTOSC0PY(SEM)andA……