标签: mrfe6vs25n

MRFE6VS25NFreescaleSemiconductorTechnicalDataDocumentNumber:MRFE6VS25NRev.0,6/2012RFPowerLDMOSTransistorHighRuggednessN--ChannelEnhancement--ModeLateralMOSFETMRFE6VS25NR1RFpowertransistordesignedforbothnarrowbandandbroadbandISM,broadcastandaerospaceapplicationsoperatingatfrequenciesfrom1.8to2000MHz.ThisdeviceisfabricatedusingFreescale’senhancedruggednessplatformandissuitableforuseinapplicationswherehighVSWRsareencountered.TypicalPerformance:VDD=50VoltsFrequency(MHz)1.8to30(1)5125121030SignalTypeTwo--Tone(10kHzspacing)Pulse(100μsec,20%DutyCycle)CWCWPout(W)25PEP25Peak2525Gps(dB)2525.425.522.5ηD(%)5174.574.760IMD(dBc)--30―――1.8-2000MHz,25W,50VWIDEBANDRFPOWERLDMOSTRANSIST……