MRFE6VS25NFreescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale’s enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) 1.8 to 30 (1) 512 512 1030 Signal Type Two--Tone (10 kHz spacing) Pulse (100 μsec, 20% Duty Cycle) CW CW Pout (W) 25 PEP 25 Peak 25 25 Gps (dB) 25 25.4 25.5 22.5 ηD (%) 51 74.5 74.7 60 IMD (dBc) --30 ― ― ― 1.8-2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSIST……