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Rezvani_6_5SubstrateIsolationin0.18umCMOSTechnologyG.AliRezvaniandJonTaoRFMicroDevices2191ZankerRd.SanJoseCA951311Outline1-Introduction2-Methodofstudy3-CouplingwithinPsubwithPwell4-ImpactofP+GuardRing5-ImpactofDeepNwell6-ImpactseparationofDeepNwells7-ComparisonwithSOI8-Conclusion21-IntroductionCMOSScalingresultedinhighperformanceMOSFETsforRFapplications.LowercostofCMOSprocessingresultedinneedforintegrationofRF,Analog,andDigitalonthesamedie.(SOC)ThreetypesofcouplingamongvariousblocksmaybecomeissuesthewaytoSOC:A-CouplingthruVddandVssB-CouplingthruSubstrateC-CouplingthruRadiationSubstrateCouplingisthesubjectofthistalk31-IntroductionThepurposeofthisstudyhasb……