原创 MT41K256M16 4Gb DDR3 DRAM

           MT41K256M16 – 32 Meg x 16 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K1G4 – 128 Meg x 4 x 8 banks 是低电压版本，相比1.5v DDR3 SDRAM 而言，其电压为1.35v，其他各方面参数完全符合DDR3 SDRAM的相关规范。QQ:1762516767 18675554078，原装现货，欢迎交流。（更多详情）

MT41K256M16 MT41K512M8 MT41K1G4的主要功能特性包括以下：

• VDD = VDDQ = 1.35V (1.283–1.45V)

• Backward compatible to VDD = VDDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 0°C to +95°C

– 64ms, 8192-cycle refresh at 0°C to +85°C

– 32ms at +85°C to +95°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

MT41K256M16 MT41K512M8 MT41K1G4的管脚图如下:

(以上信息由深圳市桑尼奇科技有限公司提供)