CGH系列:CGH60008D、CGH60015D、CGH60030D、CGH60060D、CGH60120D、CGHV1J006D、CGHV1J025D、CGHV1J070D、CGH09120F、CGH21120F、CGH21240F、CGH25120F、CGH27015、CGH27030、CGH27060、CGH31240、CGH35015、CGH35030、CGH35060F1/P1、CGH35060F2/P2、CGH35240、CGH40006P、CGH40006S、CGH40010、CGH40025、CGH40035、CGH40045、CGH40090PP、CGH40120F、CGH40120P、CGH40180PP、CGH55015F1/P1、CGH55015F2/P2、CGH55030F1/P1、CGH55030F2/P2、CGHV96050F1、CGHV96050F2、CGHV96100F1、CGHV96100F2、 依托加拿大总公司的便利,立维创展跨国经营,主要为国内高品单位、科研院校提供射频微波/毫米波产品、高频连接器。主营Miteq,NXP,CREE,Triquint,Herotek,Synergy,Marki,M/A COM,Hittite,放大器,耦合器,隔离器,衰减器,滤波器,环形器,移相器,功分器,以及其他RF微波/毫米波组件; 公司**产品CGH40010 10 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solderdown, pill packages. 主要特性: • Up to 6 GHz Operation • 16 dB Small Signal Gain at 2.0 GHz • 14 dB Small Signal Gain at 4.0 GHz • 13 W typical PSAT • 65 % Efficiency at PSAT • 28 V Operation 产品应用: • Radar • Broadband Amplifiers • UAV & Data Link • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
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