标签: fhx45x

FHX45XFHX45XGaAsFET&HEMTChipsFEATURESLowNoiseFigure:0.55dB(Typ.)@f=12GHzHighAssociatedGain:12.0dB(Typ.)@f=12GHzLg≤0.15m,Wg=280mGoldGateMetallizationforHighReliabilityGateDrainDESCRIPTIONTheFHX45XisaSuperHighElectronMobilityTransistorTM(SuperHEMT)intendedforgeneralpurpose,ultra-lownoiseandhighgainamplifiersinthe2-18GHzfrequencyrange.Thedeviceiswellsuitedfortelecommunication,DBS,TVRO,VSATorotherlownoiseapplications.Fujitsu’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance.ABSOLUTEMAXIMUMRATING(AmbientTemperatureTa=25°C)ItemDrain-SourceVoltageGate-SourceVoltageTotalPowerDissipationStorageTemperatureChannelTemperature*Note:MountedonAl2O3board(30x30……