FHX45XFHX45X GaAs FET & HEMT Chips FEATURES Low Noise Figure: 0.55dB (Typ.)@f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15m, Wg = 280m Gold Gate Metallization for High Reliability Gate Drain DESCRIPTION The FHX45X is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The device is well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature *Note: Mounted on Al2O3 board (30 x 30 ……