标签: mw6s010n

MW6S010NFreescaleSemiconductorTechnicalDataDocumentNumber:MW6S010NRev.5,6/2009RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETsDesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications.TypicalTwo-TonePerformanceat960MHz:VDD=28Volts,IDQ=125mA,Pout=10WattsPEPPowerGain―18dBDrainEfficiency―32%IMD―-37dBcCapableofHandling10:1VSWR,@28Vdc,960MHz,10WattsCWOutputPowerFeaturesCharacterizedwithSeriesEquivalentLarge-SignalImpedanceParametersOn-ChipRFFeedbackforBroadbandStabilityQualifiedUptoaMaximumof32VDDOperationIntegratedESDProtection225°CCapablePlasticPackag……