MW6S010NFreescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain ― 18 dB Drain Efficiency ― 32% IMD ― - 37 dBc Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters On - Chip RF Feedback for Broadband Stability Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 225°C Capable Plastic Packag……