标签: electrostatics

Semiconductor Manufacturing Industry: ranging from Wafer Fabrication to Chip Assembly and Testing Flat Panel Display Manufacturing (LCD products) Industry: ranging from TFT Array Fabrication, Cell Assembly to Module Assembly.

同文转自微信公众号“ESDiS Release”。每间wafer fab都存在的静电问题。 The electrostatics problems in the front-end manufacturing of semiconductors (ie. wafer fabrication) is quite different from those cases in back-end semiconductor manufacturing (ie. Chip assembly and testing), SMT and other common electronic manufacturing industries. Among the electrostatics problems, the electrostatics induced electrical failures of microelectronic devices is the typical representative case, ie. wafer top electrostatics damage mode. Figure1. the modes of wafer top electrostatics induced failures Such wafer top electrostatics failure mode exists in many processes, including the vacuum processes of PECVD (PID, Plasma process Induced Damage), Dry-etcher (PID), Asher (PID) and atmosphere processes of HPW (Highly Purified Water) rinsing cleaning, Spin dryer after rining cleaning, scrubber cleaning with spinning, etc. Figure2. a typical HPW rinsing cleaner with spinning Eventually, the back-end manufacturing of semiconductors (Chip Assembly and Testing) also exist such wafer top electrostatics induced damage and the process is also the rinsing cleaning at wafer sawing process. However, due to the big differences of wafer interior circuits, the production yield failure problem caused bysuch wafer top electrostatics is much more sensitive and severer in wafer Fabs than chip assembly and testing production lines. Figure3. PID problem in a dry etcher of wafer Fabs The Wafer top electrostatics induced damage mode is also highly related with wafer internal circuit layout and process technology scaling levels. Among nowadays mainstream semiconductor products, more and more fall into the scope of65nm technology process and below. Typically, the sensitivity level of such wafer top electrostatics induced failures at wafer fabs most goes to below 100 volts and even only several volts for the most advanced semiconductors.

广义上刷新静电领域的主要专业术语再认知：Electrostatics （静电学）, electrostatic charge （静电）, ESD （静电释放或静电放电）。 同文转自微信公众号“ESDiS Release”。 You may need to renew your industrial understandings about the relations and differences between the technical glossaries of electrostatics, electrostatic charge and ESD. Definitions Review Electrostatics:Electrostatics is the study of electric charges at rest. (referred to IEEE digital library) Electrostatic charge: also called as static electricity. it refers to electric charge at rest. (referred to glossary document of ESD ADV1.0) ESD: Electro-Static Discharge, it refers to the rapid, spontaneous transfer of electrostatic charge induced by a high electrostatic field. (Note: Usually, the charge flows through a spark between two bodies at different electrostatic potentials as they approach one another). (referred to glossary document of ESD ADV1.0) Relations and Differences Based on the above definitions, electrostatics is the broadest term to cover all aspects related with electric charges.And the plasma processes in microelectronics manufacturing industries could be also included. The industrial problems induced by electrostatics usually are caused by the movements of electric charges by the influence of the high electric fields. Regarding the term of ESD, it is just one branch in electrostatics which is one kind of particular case of rapid transfers of electric charges by high electric fields. The Broad sense of the industrial Problems of electrostatics in microelectronics manufacturing industries To the broad sense to look into nowadays microelectronics manufacturing industries, the industrial problems caused by electrostatics could involve ESA, ESD, EFM and PID. The problem of ESA (Electro-Static Attraction) group usually includes particle contaminations, process deviations by the effects of ESA. The problem of ESD (Electro-Static Discharge) group usually refers to the microelectronic device failure caused by ESD events. The problem of EFM (Electric Field induced ions migration) group usually occur in the field sensitive microelectronics devices while the ions migrate within devices under the influence of the high electric fields. EFM usually induce problems of CD (Critical Dimensions) failures or electrical leakage of microelectronics. The problem of PID (Plasma process Induced Damage) group usually refers to the insulating dielectrics (such as gate oxide layer, interlayer) failures caused by plasma effects.