标签: bipolar

AD704QuadPicoampereInputCurrentBipolarOpAmp

AD705PicoampereInputCurrentBipolarOpAmp

AD705PicoampereInputCurrentBipolarOpAmp

AD704QuadPicoampereInputCurrentBipolarOpAmp

本应用指南描述了SCS-814如何为低电平信号的前端信号调节提供8个可编程通道的Butterworth低通滤波和高质量仪器放大器，同时，SCS-815具有与线性相位Bessel滤位器相同的性能。……

用于照明的高电压功率双极晶体管NXPhighvoltagepowerbipolartransistorsBUJ&PHxseriesHighvoltagepowerbipolartransistorsforlightingOurhighvoltagepowerbipolartransistorsarepartofourindustry-leadingportfolioforenergy-efficientlighting.Designedtosupportelectronicballastandtransformerapplications,theyareavailableinversionsfrom700to1200Vanddeliververyhighefficiencywithexceptionalreliability.KeyFeaturesKeyBenefits}Planartechnology}Competitiveandcustomer-orientedproductportfolio-Mar……

本应用笔记提供关于如何使用飞利浦低VCEsat（BISS）功率晶体管更换旧的中等功率晶体管达到节省成本目的。AN10405Increasedcircuitefficiency,lessrequiredboardspaceandsavedmoneybyreplacingpowertransistorsbylowVCEsat(BISS)transistorsRev.01.00―06January2006ApplicationnoteDocumentinformationInfoContentKeywordsBipolartransistors,BISS,lowVCEsat,PBSS,powertransistorsAbstractThisapplicationnoteprovidesinformationonhowtomakeuseofacostsavingopportunitybyreplacingoldermediumpowerandpowertransistorsbyPhilips’lowVCEsat(BISS)transistors.AcrossreferencetableprovidesacrossreferenceforleadedandSMDtypes.Furtherspreadsheetsshowacomparison……

本文件包含TDA856x系列和TDA8571J功率放大器的应用信息AN10327TDA856xandTDA8571JpoweramplifiersRev.01.00―15October2004ApplicationnoteDocumentinformationInfoContentKeywordsAutomotive,audio,poweramplifier,Stereo,Quad,BTL,classAB,bipolarAbstractThisdocumentcontainsapplicationinformationforthepoweramplifierTDA856xseriesandtheTDA8571JPhilipsSemiconductorsAN10327TDA856x,TDA8571JRevisionhistoryRevDateDescription1.020041015FirstversionContactinformation……

BipolarStepperMotorDriveCircuit……

替换-philips-三极管-TOSHIBAtophilipsPhilipsSemiconductorsPowerBipolarTransistorsCrossreferencelist”PHILIPSTYPE”REFERSTOCLOSESTPHILIPSALTERNATIVEORDIRECTEQUIVALENTIFAVAILABLE.AlwaysconsidertheapplicationandcomparedataspecicationsbeforerecommendingsuitablePhilipstypeTYPEMANUFACTURERPHILIPSTYPE2SC4589HITACHIBU4525AF2SC4692HITACHIBU4530AL2SC4742HITACHIBU2508DW2SC4743HITACHIBU4508AX2SC4744HITACHI……

官方资料-philipspartcross(mms)philips型号与各品牌互替PhilipsSemiconductorsPowerBipolarTransistorsCrossreferencelist”PHILIPSTYPE”REFERSTOCLOSESTPHILIPSALTERNATIVEORDIRECTEQUIVALENTIFAVAILABLE.AlwaysconsidertheapplicationandcomparedataspecicationsbeforerecommendingsuitablePhilipstypeTYPEMANUFACTURERPHILIPSTYPE2SC4589HITACHIBU4525AF2SC4692HITACHIBU4530AL2SC4742HITACHIBU2508DW2SC4743HITACHIBU4508AX2SC4744HITACHI……

Abstract:Abroadbandphase-lockloop(PLL)buildingblockintegratedcircuit(IC)thatcanaccommodatesignalfrequenciesfrom0.5GHzto9GHzispresented.Thedesignintegratesaprescalerwithselectabledivideratio,aphasedetector,avoltage-controlledoscillatorforproductiontesting,andassociatedcircuitry.ThechipisdesignedonMaxim'sGST-2bipolarlineararraytechnologyandispackagedina16-pinplasticdualin-linepackage.Theresultisalow-cost,broadbandsolutionforavarietyofPLLsystems.Maxim>AppNotes>ASICsSIGNALGENERATIONCIRCUITSWIRELESS,RF,ANDCABLEKeywords:siliconbipolar,PLL,integratedcircuit,IC,Maxim,GST-2,QuickChip,ASIC,broadbandpllMar27,2001APPLICATIONNOTE635QuickChipDesignExample1-ASiliconBipolarBroadbandPLLBuildingBlockIntegratedCircuitAbstract:Abroadbandphase-lockloop(PLL)buildingblockintegratedcircuit(IC)thatcanaccommodatesignalfrequenciesfrom0.5GHzto9GHzispresented.Thedesignintegratesaprescalerwithselectabledivideratio,aphasedetector,avoltage-controlledoscillatorforproductiontesting,andassociatedcircuitry.ThechipisdesignedonMaxim'sGST-2bipolarlineararraytechnologyandispackagedina16-pinplasticdualin-linepackage.Theresultisalow-cost,b……

Abstract:ThispaperdescribesasiliconbipolarASICdesignforhigh-endGPSreceiversthatdeliversareferencefrequencyandIFoutputstoallowfortrackingofGLONASSsatellites.The3.2mm²receiveroperatesataminimumsupplyvoltageof2.7V,over-40°Cto+85°Ctemperaturerange.Ithasa4dBnoisefigure(includingRFfilters),atotalon-chipgainof130dB,andanIIP3of-31dBm.Maxim>AppNotes>ASICsWIRELESS,RF,ANDCABLEKeywords:GPS,GLONASS,siliconbipolar,gpsreceivers,maxim,GST-2,QuickChip,QC-9,glonassreceiver,Mar31,2000ASICAPPLICATIONNOTE640ASingleChipSiliconBipolarReceiverforGPS/GLONASSApplicationsAbstract:ThispaperdescribesasiliconbipolarASICdesignforhigh-endGPSreceiversthatdeliversareferencefrequencyandIFoutputstoallowfortrackingofGLONASSsatellites.The3.2mmreceiveroperatesataminimumsupplyvoltageof2.7V,over-40°Cto+85°Ctemperaturerange.Ithasa4dBnoisefigure(includingRFfilters),atotalon-chipgainof130dB,andanIIP3of-31dBm.Conference:IEEEInternationalSolid-StateCircuitsConference1999Session:CommunicationsAuthor:MichaelJ.McCullaghAffiliation:Sy……

Abstract:Atwo-stage1.9GHzmonolithiclow-noiseamplifier(LNA)withameasurednoisefigureof2.3dBandanassociatedgainof15dBwasfabricatedinastandardsiliconbipolartransistorarray.Itdissipates5.2mWfroma3Vsupplyincludingthebiascircuitry.Inputreturnlossandisolationare-9dBand-20dB,respectively.Maxim>AppNotes>ASICsWIRELESS,RF,ANDCABLEKeywords:Maxim,QuickChip,siliconbipolar,LNA,1.9GHz,QuickChip9,semi-custom,ASIC,lownoiseMar17,2000amplifier,quickchipAPPLICATIONNOTE644QuickChipDesignExample2LowPowerSiliconBJTLNAfor1.9GHzAbstract:Atwo-stage1.9GHzmonolithiclow-noiseamplifier(LNA)withameasurednoisefigureof2.3dBandanassociatedgainof15dBwasfabricatedinastandardsiliconbipolartransistorarray.Itdissipates5.2mWfroma3Vsupplyincludingthebiascircuitry.Inputreturnlossandisolationare-9dBand-20dB,respectively.1998IEEE.Reprinted,withpermission,from1998IEEEMicrowaveandGuidedWaveLetters,Vol.3,No.3,pp.136-137I.IntroductionInportablecommunicationequipment,suchascellular……

摘要：当输入偏置电流成为一个问题？这架构提供最低的失调电压吗？本应用笔记介绍了常见的运算放大器的输入结构及其相关的设计优势和挑战。Maxim>AppNotes>AMPLIFIERANDCOMPARATORCIRCUITSKeywords:bipolar,CMOS,inputbiascurrent,inputoffsetvoltage,opamps,operationalamplifierNov30,2000APPLICATIONNOTE717OperationalAmplifierInputsAbstract:Whendoesinputbiascurrentbecomeaconcern?Whicharchitectureoffersthelowestoffsetvoltage?Thisapplicationnoteintroducescommonop-ampinputstructureswiththeirassociateddesignadvantagesandchallenges.Operationalamplifier(opamp)inputsvarywidelyinstructureandperformance.Thisdocumentpresentscommonop-ampinputstructures.ByusingtheElectricalCharacteristicstable,theopampsareidentifiedbytypeandpartnumber.Eachopampstructuretypeoffersitsownadvantagesanddisadvantages.Therefore,Maximwillcontinuetointrodu……

两个精度运算放大器(MAX4236)、参考电压源（MAX6143）、与非门，，相关的组件，此直流电压探测器电路断言数字输出信号时的输入是居中0V±100mV窗口内。Maxim>Designsupport>Appnotes>AmplifierandComparatorCircuits>APP4568Maxim>Designsupport>Appnotes>CircuitProtection>APP4568Maxim>Designsupport>Appnotes>MicroprocessorSupervisorCircuits>APP4568Keywords:bipolardc-voltagedetection,high-impedanceinputs,galvanicisolationJan26,2011APPLICATIONNOTE4568BipolarDC-VoltageDetectorOffersSensitivityandPrecisionAbstract:Comprisedoftwoprecisionopamps(MAX4236),avoltagereference(MAX6143),aNANDgate,andassociatedcomponents,thisDC-voltagedetectorcircuitassertsadigitaloutputsignalwhentheinputiswithina±100mVwindow,centeredat0V.Asimilarver……

摘要：由两个精密运算放大器（MAX4236），参考电压（MAX6143），与非门，以及相关的组件，这个直流电压检测电路断言数字输出信号，当输入是在±100mV的窗口，集中在0V。Maxim>Designsupport>Appnotes>AmplifierandComparatorCircuits>APP4568Maxim>Designsupport>Appnotes>CircuitProtection>APP4568Maxim>Designsupport>Appnotes>MicroprocessorSupervisorCircuits>APP4568Keywords:bipolardc-voltagedetection,high-impedanceinputs,galvanicisolationJan26,2011APPLICATIONNOTE4568BipolarDC-VoltageDetectorOffersSensitivityandPrecisionAbstract:Comprisedoftwoprecisionopamps(MAX4236),avoltagereference(MAX6143),aNANDgate,andassociatedcomponents,thisDC-voltagedetectorcircuitassertsadigitaloutputsignalwhentheinputiswithina±100mVwindow,centeredat0V.Asimilarver……

摘要：CMOS源的追随者不容易电路设计，但仔细分析，并考虑在BSIM模型源电阻，设计人员可以实现更精确的结果，以达到更好的匹配低噪声放大器的设计。Maxim>AppNotes>COMMUNICATIONSCIRCUITSKeywords:SourceResistance,CMOS,Source-Follower,Source-Followergain,BJT,bipolarjunctiontransistor,Jun27,2008commondrainamplifier,small-signalmodel,calculatingsourceresistance,intrinisicgm',low-noiseamplifierAPPLICATIONNOTE4231CMOSSourceResistanceandItsEffectsonSource-FollowerGainBy:JohnRobinsonAbstract:CMOSsourcefollowersarenoteasycircuitstodesign,butbycarefulanalysisandbytakingsourceresistanceintoaccountintheBSIMmodels,designerscanachievemoreaccurateresultstoachievebettermatchinginthedesignoflow-noiseamplifiers.IntroductionTheCMOSsourcefollowerisadifficultdevicetodesignusingaCMOSdevice,becausethetransconductanceofaCMOSdeviceislowco……

DesigningBipolarTransistorR...,BJT2_____DesigningBipolarTransistorRadioFrequencyIntergratedCircuits……

bipolarADDENDUMABIPOLARDIGITALDESIGNQualitativeunderstandingofthebipolardevicenBipolardevicemodelsnTheECLGatenAdvancedbipolardigitaldesignnA.1IntroductionA.2TheBipolarTransistorA.2.1AFirstGlanceattheDeviceA.2.2StaticBehaviorA.2.3DynamicBehaviorA.2.4TheActualBipolarTransistor―SecondaryEffectsA.2.5SPICEModelsfortheBipolarTransistorA.3TheBipolarECLInverterA.3.1IssuesinBipolarDigitalDesign:ACaseStudyA.3.2TheEmitter-CoupledLogic(ECL)GateataGlanceA.3.3RobustnessandNoiseImmunity:TheSteady-StateCharacteristicsA.3.4ECLSwitchingSpeed:TheTransientBehaviorA.3.5PowerConsumption12A.3.6LookingAhead:ScalingtheTechnologyA.4BipolarGateDesignA.4.1LogicDesigninECLA.4.2DifferentialECLA.4.3Curren……