标签: gallium-arsenide

摘要：电流传感器监控MESFET的源漏源电流（IDS），并提供反馈意见，以克服的缺点门转门的输入阈值电压变化的砷化镓金属半导体场效应晶体管，砷化镓MESFET的。Maxim>AppNotes>AmplifierandComparatorCircuitsKeywords:MESFETs,Gallium-Arsenide,GaAsMESFETs,currentsenseamps,currentsensing,mesfet,metalsemiconductorfieldeffectDec04,2002transistorsAPPLICATIONNOTE1800SmartICMaintainsUniformBiasCurrentforGaAsMESFETsAbstract:Acurrentsensorthatmonitorsthedrain-sourcecurrent(IDS)atthesourceoftheMESFETandprovidesfeedbacktothegateinputovercomingthedrawbacksofgate-turn-onthresholdvoltagevariationsforgallium-arsenidemetal-semiconductorfield-effecttransistors,GaAsMESFETs.Thegate-turn-onthresholdvoltageforgallium-arsenidemetal-semiconductorfield-effecttransistors(GaAsMESFETs)variesconsiderablyfromparttopart,evenwithinagivenlot.That……