摘要：电流传感器监控MESFET的源漏源电流（ IDS ） ，并提供反馈意见，以克服的缺点门转门的输入阈值电压变化的砷化镓金属半导体场效应晶体管，砷化镓MESFET的。 Maxim > App Notes > Amplifier and Comparator Circuits Keywords: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current sensing, mesfet, metal semiconductor field effect Dec 04, 2002 transistors APPLICATION NOTE 1800 Smart IC Maintains Uniform Bias Current for GaAs MESFETs Abstract:A current sensor that monitors the drain-source current (IDS) at the source of the MESFET and provides feedback to the gate input overcoming the drawbacks of gate-turn-on threshold voltage variations for gallium-arsenide metal-semiconductor field-effect transistors, GaAs MESFETs. The gate-turn-on threshold voltage for gallium-arsenide metal-semiconductor field-effect transistors (GaAs MESFETs) varies considerably from part to part, even within a given lot. That ……