热度 2
2011-12-12 15:29
930 次阅读|
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4)OperatingTemperature 工作温度范围:C -20-+70℃ D -40-+85℃ E -55-+105℃ 5)FrequencyStability 温度频率稳定度:F ±0.28ppm G ±0.5ppm H ±1.0ppm I ±1.5ppm J ±2.0ppm K ±2.5ppm 6)OutputWaveform 输出波形: 1Sine 正弦波 2Hcmos 方波3 ClippedSine削峰正弦波 7)SupplyVoltage 工作电压范围: L3.3V±10% M5.0V±10% 8)Ageing 频率老化率: ±1ppmmaximuminfirstyear,±3ppmmaximumfor10years 9)PhaseNoise 相位噪声: Frequency 10Hz 100Hz 1kHz 10kHz 100kHz 13.0MHz –95 dBc/Hz –120dBc/Hz –135dBc/Hz –140dBc/Hz –145dBc/Hz 2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,8.192MHz, 9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz, 14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz,16.384MHz,16.8MHz,17MHz, 18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz, 20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz, 32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz, 100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz 温补晶振TCXO 10MHz ±0.5ppm, -40℃~+85℃,5.0V,sine输出,不带频率调整,封装SMD7×5×2mm 温补晶振TCXO 10MHz ±0.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5×2mm 温补晶振TCXO 10MHz ±0.5ppm, -40℃~+85℃,3.3V,sine输出,带频率调整,封装SMD7×5×2mm 温补晶振TCXO 10MHz ±0.5ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 10MHz ±1.0ppm, -20℃~ +70℃, 3.3V, Hcmos,带频率调整,封装SMD7×5×2mm 温补晶振TCXO 10MHz ±1.5ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 10MHz ±2.0ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 10MHz ±2.5ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 10MHz ±1.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm 温补晶振TCXO 10MHz ±2.0ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm 温补晶振TCXO 10MHz ±2.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm 温补晶振TCXO 10MHz ±1.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm 温补晶振TCXO 10MHz ±2.0ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm 温补晶振TCXO 10MHz ±2.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm 温补晶振TCXO 20MHz ±0.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5×2mm 温补晶振TCXO 20MHz ±0.5ppm, -40℃~+85℃,3.3V,sine输出,不带频率调整,封装SMD7×5×2mm 温补晶振TCXO 20MHz ±0.5ppm, -40℃~+85℃,3.3V,sine输出,带频率调整,封装SMD7×5×2mm 温补晶振TCXO 20MHz ±0.5ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 20MHz ±1.0ppm, -20℃~ +70℃, 3.3V, Hcmos,带频率调整,封装SMD7×5×2mm 温补晶振TCXO 20MHz ±1.5ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 20MHz ±2.0ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 20MHz ±2.5ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO20MHz ±1.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm 温补晶振TCXO 20MHz ±2.0ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm 温补晶振TCXO 20MHz ±2.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm 温补晶振TCXO 20MHz ±1.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm 温补晶振TCXO 20MHz ±2.0ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm 温补晶振TCXO 20MHz ±2.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm 温补晶振TCXO 40MHz ±0.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5×2mm 温补晶振TCXO 40MHz ±0.5ppm, -40℃~+85℃,3.3V,sine输出,不带频率调整,封装SMD7×5×2mm 温补晶振TCXO 40MHz ±0.5ppm, -40℃~+85℃,3.3V,sine输出,带频率调整,封装SMD7×5×2mm 温补晶振TCXO 40MHz ±0.5ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 40MHz ±1.0ppm, -20℃~ +70℃, 3.3V, Hcmos,带频率调整,封装SMD7×5×2mm 温补晶振TCXO 40MHz ±1.5ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 40MHz ±2.0ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 40MHz ±2.5ppm, -40℃~+85℃, 3.3V,clippedsine, 带频率调整,封装SMD 5×3mm 温补晶振TCXO 40MHz ±1.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm 温补晶振TCXO 40MHz ±2.0ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm 温补晶振TCXO 40MHz ±2.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD5×3mm 温补晶振TCXO 40MHz ±1.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm 温补晶振TCXO 40MHz ±2.0ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD7×5mm 温补晶振TCXO 40MHz ±2.5ppm, -40℃~+85℃, 3.3V,Hcmos,带频率调整,封装SMD 7×5mm Ractron,Citizen,C-mac,NDK,Rakon,Raltron,TDK,Vectron 详细产品资料和技术规格可以来电来函咨询! 欢迎来电或传真、邮件提供邮递地址和邮编以便我们邮寄详细产品选型手册给您!