tag 标签: biasing

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  • 所需E币: 5
    时间: 2020-1-13 19:54
    大小: 56.57KB
    上传者: givh79_163.com
    MESFETAmplifierBiasingMESFETAmplifierBiasingAN-0002BiasingCircuitsandConsiderationsforGaAsMESFETPowerAmplifiersSummaryInordertoproperlyuseanyamplifieritisnecessarytoprovidethecorrectoperatingenvironment,especiallytheDCbias.ThisapplicationnoteoutlinessomeoftheconsiderationsforbiasingMESFETamplifiers.Itemsconsideredhereinare:Constantcurrentoperation,Temperaturecompensationofthebiasingnetwork,andPowersequencingoftheappliedvoltages.OverviewTheI-VcurvesofFigure1representatypicalMESFETdeviceinacommonsourceconfiguration.ForatypicaldeviceoperatinginClassAthedesiredcurrentis50%ofthemaximumcurrentforanyparticularpart.TypicalMESFETdevicesaredepletionmode,meaningthatthehighestdrain-sourcecurrentoccursfor……
  • 所需E币: 4
    时间: 2020-1-14 14:22
    大小: 223.27KB
    上传者: 微风DS
    AreconfigurableRFpoweramplifierbiasingschemeRegularSessionI:H$hFrequencyCircuits&TechniquesAReconfigurableRFPowerAmplifierBiasingSchemeNathalieDeltimple,EricKerhervP,YamDevalandPierreJarryIXLLaboratory,CNRSUMR5818,CNRSFR2648,ENSEIRB-BordeauxIUniversity,351coursdelaLiberation,33405TalenceCedex,France,e-mail:deltimole@ixl.fr.Abstract-Areconfigurablepoweramplifier(PA)isstudiedinthispaper,dedicatedtomulti-mode,multi-standardradiofrequencyfront-end(RFFE),fromalowcostapproach.Thereconfigurableamplifiertopologyispresented,madeupoftwostagesindependentlycontrollablebythebiasingschemeproposed-#hiehallowsthedynamicmodificationofthequiescentcurrentoftheRFtransistor,toadaptbothitslinearityanditsoutputpowerinordertofulfilldiffer……
  • 所需E币: 3
    时间: 2020-1-14 14:23
    大小: 403KB
    上传者: givh79_163.com
    AmonolithicSiPCS-CDMApoweramplifierwithanimpedance-controllablebiasingschemeTUE3F-4AMONOLITHICSIPCS-CDMAPOWERAMPLIFIERWITHANIMPEDANCE-CONTROLLABLEBIASINGSCHEMESifenLuoandTirdadSowlatiPhilipsResearch,BriarcliffManor,NewYork10530,USAAbstract-ThispaperforthefirsttimepresentsamonolithicSiPCS-CDMApoweramplifier(PA)capableofdelivering28.2dBmoutputpowerwith30%power-addedefficiency(PAE)and-45dBcadjacent-channel-powerratio(ACPR)at1.9GHzand3.6Vsupplyvoltage.ThePAimplementedina30GHzBiCMOSprocessincorporatesanovelimpedance-controllablebiasingschemetocontrolclassofoperationandbiasimpedanceoftheoutputstage.controllablebiasingschemeforthePAanditsadvantagesovertheconventionalonearepresentedinSection111.MeasuredresultsofthePAwiththeimpedancecontrollablebiasingscheme……