标签: LDMOS

用于高低压电路的LDMOS解决方案

用于高低压电路的LDMOS解决方案

LDMOS功率放大器的温补电路设计

LDMOSRFpowerampsdominatetheGSMandCDMAbase-stationmarketsbyprovidingexcellentperformanceatacompetitivecost.OnekeyelementtoprovidinghighperformancewithLDMOSamplifiersiscompensatingthegatebiasvoltagetomaintainaconstantquiescentcurrentovertemperature.SeveralsolutionscurrentlyexistforbiasingLDMOSRFpoweramps,includingDallasSemiconductor'sDS1870biascontroller.ThisapplicationnoteshowsanalternativeanalogbiasingsolutionusingtheDS4303.……

OptimizingLDMOSTransistorsBiasControlAnAccurateSolutionforBasestationRFPowerAmplifiersLDMOSTransistorsBiasControlinBasestationRFPowerAmplifiersUsingIntersil’sLUT-basedSensorSignalConditionersApplicationNoteApril20,2006AN174.2Author:JimPflastererIntroductionVddLDMOStransistorsareusedforRFPowerAmplificationinnumerousapplicationsfrompoint-to-multipointcommunicationstoRadar.Themostpervasiv……

摘要：Maxim的MAX1385评估板（EVkit）的软件包括Windows®图形用户界面（GUI）程序;然而，更新此显示的时间成本与控制回路的干扰。本应用笔记显示了更加优化的闭环控制方案，使用一个控制台菜单系统，而不是一个GUI。Maxim>AppNotes>COMMUNICATIONSCIRCUITSTEMPERATURESENSORSandTHERMALMANAGEMENTKeywords:controlloop,LDMOS,FET,bias,basestation,poweramplifier,RFJun10,2007APPLICATIONNOTE4065ImplementingaMAX1385-BasedControlLoopinC/C++Abstract:Maxim'sMAX1385evaluationkit(EVkit)softwareincludesaWindowsgraphicaluserinterface(GUI)program;however,thetimecostofupdatingthisdisplayinterfereswiththecontrolloop.Thisapplicationnoteshowsamoreoptimalcontrol-loopprogram,usingaconsolemenusysteminsteadofaGUI.WhenusedwiththeMAX1385EVKIT+demoboard,thecontrolloopachievesaregulationaccuracyof±2%.ThisaccuracyislimitedbythegatedriveroutputstepsizeandtheFETtransconductance.Drain-curr……

Powerlevel-dependentdual-operatingmodeLDMOSpoweramplifierforCDMAwirelessbase-stationapplicationsIEEETRANSACTIONSONMICROWAVETHEORYANDTECHNIQUES,VOL.53,NO.2,FEBRUARY2005739PowerLevel-DependentDual-OperatingModeLDMOSPowerAmplierforCDMAWirelessBase-StationApplicationsYounkyuChung,Member,IEEE,JinseongJeong,YuanxunWang,Member,IEEE,DalAhn,SeniorMember,IEEE,andTatsuoItoh,Fellow,IEEEAbstract―Thedesignandanalysisofadual-operatingmodelaterallydiffusedmetal……

MOTOROLA_LDMOS功放管子仿真库以及库的安装和...,MOTOROLA_LDMOS_DESIGNER_DK_V1……

rf_power_amp_ldmosPHILIPSRFPowerAmplifierDesignUsingLDMOSSemiconductorsKornéVennemaPhilipsSemiconductors25ForbesBoulevard,Foxborough,MA02035PHILIPSPresentationOutlineIntroductionTheMarketAmplifierConceptsPAFundamentalsDigitalModulationCharacterizationInsideTheRFPowerTransistorTransistorCharacteristicsPulsedApplicationsApplicationCircuitsThermalResistanceReliability/Electromigration2SemiconductorsPHILIPSMarketKornéVennemaMarketingApplicationEngineerRFPowerTransistorsandModulesPhilipsSemiconductors25ForbesBoulevard,FoxboroughMA02035PHILIPSMarketMarketTheconsumerwants:Higherdatarates(wirelessinternet/video/e-mail)TheOEM/ServiceProviderwants:HighernetworkcapacityHigherdataratesMoreefficientampli……

LDMOS射频功率放大器应用推广Rev2;2/06可提供评估板LDMOSRF功放偏置控制器________________________________特性用于射频功放偏置控制的可编程双通道解决方案电位器位置可自动更新，以补偿环境温度和漏极电压或漏极电流五路、13位ADC连续监控环境温度、VCC、VD、ID1和ID2每路ADC的上/下限报警可触发故障输出信号非易失存储器用于器件设置、查找表和32字节的用户存储器I2C兼容串行接口，同一串行总线上可挂接多达8个器件单电源5V供电小尺寸16引脚TSSOP封装-40°C至+95°C工作温度范围________________________________概述DS1870是一款面向AB类LDMOS射频功率放大器应用推出的双通道偏置控制器。DS1870根据放大器的温度、漏极电压或漏极电流(或其它的外部监控信号)，通过查找表(LUT)控制电位器的256个位置。DS1870内部具有温度传感器和多路A/D转换器(ADC)，提供高效、低成本的解决方案，使用非线性补偿技术改善功放效率，这是传统的偏置方案无法提供的。DS1870________________________________应用蜂窝基站医疗设备工业控制光收发器____________________________定购信息PARTDS1870E-010DS1870E-010+TEMPRANGE-40°Cto+95°C-40°Cto+95°CPIN-PACKAGE16TSSOP(173mils)16TSSOP(173mils)+表示无铅封装。典型工作电路在数据资料的最后给出。_________……

使用ADS进行LDMOS功放管匹配仿真方法MOTOROLAFreescaleSemiconductor,Inc.SEMICONDUCTORENGINEERINGBULLETINOrderthisdocumentbyEB212/DEB212UsingDataSheetImpedancesforRFLDMOSDevicesPreparedby:DarinWagnerMotorolaSemiconductorProductsSectorINTRODUCTIONThisdocumentexplainstheformatusedbyMotorolaforpresentingLDMOSimpedanceinformationforbothsingle-endedandpush-pulldevicesonRFPowerdatasheets.Thepurposeofthisdocumentistoclarifytheuseofthisinformationintheinitialdesignofinputandoutputmatchingnetworksforthesedevices.Multiplemethodsareavailableforimpedanceextraction.Thescopeofthisdocumentdoesnotcoverdetailedextractionmethods;however,apossibleextractionmethodisexplainedhere.Whichevermethodisused,themainconcerntobeFrees……

LDMOSRF功放偏置控制器DS1870……

功率放大器在现代无线通信系统中有着重要作用，AB类功率放大器因其能够平衡效率与线性度的关系被广泛研究使用；LDMOS晶体管因其优异的工作性能，是目前多种射频功率应用中主流的技术之一。采用LDMOS晶体管设计了一款工作频段在2.11~2.17GHz的AB类功率放大器，完成了匹配电路的设计，在工作频段内S1118.7dB，最大线性输出功率P1dB>51dBm，其相应的漏极效率在59%以上；从P1dB点回退6.5dB点的漏极效率大于31%，上三阶交调为-35.9dBc，下三阶交调为-35.6dBc。仿真结果表明，设计的功率放大器可满足实际基站的应用需求。

提出了一种新型TRIPLERESURF结构的LDMOS器件，与普通的TRIPLERESURF结构不同的是埋层采用了分区注入，即在靠近源端一侧采用较高注入剂量，在靠近漏端一侧则采用较低的注入剂量。因而会降低漏端表面电场峰值，提高了击穿电压。利用SILVACOTCAD软件分析了各个参数对击穿电压和比导通电阻的影响，与普通的TRIPLERESURF结构相比，在比导通电阻不变时，击穿电压则提高了15V。