原创二极管参数中英文对照表

 2007-4-20 17:24  10205 15 11 分类: 工程师职场

参数文字符号一览表

文字符号	中文	English
I_F(AV)	正向平均电流(整流管)	mean foreard current (of diode)
I_T(AV)	通态平均电流	mean on-state current
V_RSM	反向不重复峰值电压	non-reetitive peak reverse voltage
V_RRM	反向重复峰值电压	repetitive peak reverse voltage
V_DSM	断态不重复峰值电压	non-repetitive peak off-state voltage
V_DRM	断态重复峰值电压	repetitive peak off-state voltage
V_FM	正向峰值电压(整流管)	peak forward voltage (of diode)
V_TM	通态峰值电压	peak on-state voltage
T_jm	最高等效结温	maximum virtual junction temperature
F	紧固力	mounting force
I_RRM	反向重复峰值电流	repetitive peak reverse current
I_DRM	断态重复峰值电流	repetitive peak of-state current
V_GT	门极触发电压	gate trigger voltage
I_GT	门极触发电流	gate trigger current
R_jc	结壳热阻	junction-case thermal resistance
Q_rr	反向恢复电荷	reverse recovery charge
I_TM	通态峰值电流	peak on-state current
I_FM	正向峰值电流(整流管)	peak forward current (of diode)
I_TSM	通态浪涌电流	surge on-state current
dv/dt	断态电压临界上升率	critical rate of rise of off-state voltage
di/dt	通态电流临界上升率	critical rate of rise of on-state current
t_gt	门极控制开通时间	gate controlled turn-on time
t_q	电路换向关断时间	cricuit commutated turn-off time
I_RMS	通态方均根电流	R.M.S. on-state current
(dv/dt)_c	换向电压临界上升率(双向晶闸管)	critical rate of rise of commutating voltage(of bi-directional thyristor)
t_rr	反向恢复时间(二极管的)	reverse recovery time (of diode)
t_on	开通时间	turn on time
t_s	存储时间	storage time
t_f	下降时间	fall time