infineon FET-IGBT控制Conductivity-Modulated FETs-IGBT Up to a reverse voltage of VDS ≤ 200 V, power MOSFETs are superior in all respects to any other switching devices components. With a supply voltage of VB > 200 V, the bipolar transistor has a lower saturation voltage (VCE sat ≤ VDSon) and is cheaper. In comparison with a bipolar transistor (assuming the same chip dimensions), a power MOSFET with a reverse voltage of VDS = 1000 V has significantly higher ON-resistance, and therefore high voltage drops and high static losses when switched on. The high ON-resistance of high-voltage MOSFETs can only be reduced by means of a larger chip surface. High-voltage MOSFETs are nonetheless used in application areas where their advantages represent a critical factor: short switching time, no storage time, easy to control……