BFG425W放大器1500MHzPhilips Semiconductors B.V.
Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Report nr. Author Date Department
: RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development
1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W
Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly RF-transistor. The LNA is designed for a frequency f=1.5GHz, VSUP~3.8V, ISUP=5mA. Measured performance at f=1.5GHz: Noise Figure NF~1.6dB, rf-Gain S21 ~14dB. Applications: Global Positioning Systems (GPS) Satellite Terminals.
Appendix I: 1.5GHz LNA circuit Appendix II: Printlayout and list of used components & materials Appendix III: Results of simulations and measurements
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Philips Semiconductors B.V.
Introduction: With the new Philips sil……
