采用BFG540W X晶体管的400MHz驱动放大器Philips Semiconductors B.V.
Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Report nr. Author Date Department
: RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development
400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X
Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The LNA is designed for a frequency f=400MHz, VSUP=3.0V, ISUP~7.5mA. Measured performance at f=400MHz: Noise Figure NF~1.0dB, rf-Gain S21 ~15.5dB, Input_IP3~2dBm
Applications: LNA for a 400MHz CDMA system (Chinese market).
Appendix I: 400MHz LNA circuit Appendix II: Printlayout and list of used components & materials Appendix III: Results of simulations and measurements
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Philips Semiconductors B.V.
Introduction: With Philips silicon wide……
