analysis of RFANALYSIS OF RF SCATTERING PARAMETERS AND NOISE AND POWER PERFORMANCES OF RF-POWER MOS IN 0.15-M RF CMOS TECHNOLOGY FOR RF SOC APPLICATIONS Yo-Sheng Lin Department of Electrical Engineering National Chi-Nan University Puli, Taiwan, R.O.C. Received 7 October 2003 ABSTRACT: In this paper, we demonstrate an analysis of the effects of transconductance g m on the kink phenomenon of the scattering parameters S 11 , S 22 , S 21 , and S 12 of RF power n-MOSFETs in 0.15-m RF CMOS technology for RF SOC applications. It is found that either the increase of the device’s width or the increase of the gate-source voltage V GS (when its corresponding g m is smaller than the maximum g m ) and the decrease of the measurement temperature can enhance the kink effect of both S 11 and S 22 due to the increase of……