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1.9G--DRO设计-1RD
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类别: 消费电子
时间:2020-02-10
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111.92 GHz DRO Silicon Discretes Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Description Infineon’s BFP640 is a high-performance, low-cost Silicon-Germanium bipolar transistor housed in a 4-lead SOT-343 surface mount package. With a transition frequency in excess of 36 GHz, this device is ideal for high performance applications including low noise amplifiers, oscillators and driver amplifiers. The BFP640 offers exceptionally low noise figure, high gain, high linearity and a low flicker-noise corner frequency. The BFP640 rivals more expensive GaAs FET devices in performance without requiring a negative supply voltage. This note describes the BFP640 in a low phase noise DRO application 3 4 2 1 B, 1 E, 2 Top View VPS05605 4, E 3, C Introduction Oscillators represent the……
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