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射频CMOS集成电路原理和设计-9
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射频CMOS集成电路原理和设计-9 Noise Contents Introduction Thermal noise Shot noise Flicker noise Popcorn noise Two-port noise theories Two-Port Noise Parameters for MOSFET Lecture 7, Oct. 21, 2003 1 Introduction The noise phenomena are caused by the small current and voltage fluctuations that are generated within the device themselves. The existence of noise is basically due to the fact that electrical charge is not continuous but is carried in discrete amount equal to the electron charge. The study of noise is important since it represents a lower limit to the size of electrical signal that can be amplified by a ……
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