原创芯成半导体 DRAM

 2014-1-3 10:16  667 5 5 分类: 处理器与DSP

DRAM

简介

　　ISSI是一家国际性的高科技公司，专门从事设计、开发、制造和销售高性能集成电路存储器，是北美最大的SRAM制造商之一。ISSI的核心产品包括高速、低功耗的SRAM；中、低容量的DRAM；EEPROM及其他集成电路存储器。
　　ISSI的产品结合了集成电路设计的尖端技术与先进的制造工艺,满足了半导体器件市场和客户在多元化连接性、可携带性和宽带方面的要求。

产品选型表

3.3V SDR (Single Data Rate) Synchronous DRAM

Part No.	Density	Org	Vcc	Refsh	Speed (Mhz)
IS42S16100E	16M	1Mx16	3.3V	2K	200,166,143
IS42S16400F	64M	4Mx16	3.3V	4K	200,166,143
IS42S32200E	64M	2Mx32	3.3V	4K	200,166,143
IS42S81600E	128M	16Mx8	3.3V	4K	200,166,143,133
IS42S16800E		8Mx16			200,166,143,133
IS42S32400E		4Mx32			166,143
IS42S83200D	256M	32Mx8	3.3V	8K	166,143
IS42S16160C		16Mx16		8K
IS42S32800D		8Mx32		4K
IS42S16320B	512M	32Mx16	3.3V	8K	166,143
IS42S32160C	512M	16Mx32	3.3V	8K	166,133

2.5V DDR (Double Data Rate) Synchronous DRAM

Part No.	Density	Org	Vcc	Refsh	Speed (Mhz)
IS43R16800CC	128M	8Mx16	2.5V	4K	200,166
IS43R32400D	128M	4Mx32	2.5V	4K	250,200,166
IS43R16160B	256M	16Mx16	2.5V	8K	200,166,133
IS43R32800B	256M	8Mx32	2.5V	4K	200,166,133

1.8V DDR2 (Double Data Rate) Synchronous DRAM

Part No.	Density	Org	Vcc	Refsh	Speed (Mhz)
IS43DR32800A	256M	8Mx32	1.8V	4K	533,400
IS43DR86400B	512M	64Mx	1.8V	8K	800,667,533

Commodity DRAM

Part No.	Density	Org	Vcc	Refsh	Speed (Mhz)
IC42S16100E	16M	1Mx16	3.3V	2K	200,166,143
IC42S16400F	64M	4Mx16	3.3V	4K	200,166,143
IC43R16800E	128M	8Mx16	2.5V	4K	200,166
IC42S16160C	256M	16Mx16	3.3V	8K	166,143,133