A dual bias-feed circuit design for SiGe HBT low-noise linear amplifier414 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 A Dual Bias-Feed Circuit Design for SiGe HBT Low-Noise Linear Amplifier Eiji Taniguchi, Member, IEEE, Takayuki Ikushima, Kenji Itoh, Member, IEEE, and Noriharu Suematsu, Member, IEEE Abstract―An SiGe HBT low-noise amplifier (LNA) with a novel diode/resistor dual base bias-feed circuit is described. The dual bias-feed circuit extends 1 dB without degradation of the noise figure (NF). In the small-signal region, a conventional resistor bias-feed circuit is a dominant base current source and, in the large-signal region, the diode turns on and the diode bias-feed circuit supplies the base current like a voltage source, which allows higher output power and linearity. In this paper, the operation principle ……