134DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number NESG250134 Order Number NESG250134-AZ Package 3-pin power minimold (Pb-Free) NESG250134-T1 NESG250134-T1-AZ Note1, 2 Quantity 25 pcs (Non reel) 1 kpcs/reel Magazine case Supplying Form 12 mm wide embossed tapin……